Stress relieving with resistive materials based on silicon carbide (SiC)

verfasst von

J. Gärtner, Ernst Gockenbach, H. Borsi

Abstract

The stress relieving on components of high-voltage equipment with semiconducting materials based on silicon carbide (SiC) is discussed. Two different types of conducting layers are presented: one kind consists of a ceramic overglaze, the other is based on different organic mastics. The electrical behavior of both types of conductive layers, used in cables and cable accessories are also discussed.

Organisationseinheit(en)

Fachgebiet Hochspannungstechnik und Asset Management (Schering-Institut)

Typ

Paper

Seiten

759-762

Anzahl der Seiten

4

Publikationsdatum

1998

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Ingenieurwesen (insg.), Werkstoffwissenschaften (insg.)